Crystal structure and ferroelectric properties of (Bi,La)4(Ti,Si)3O12 as a bulk ferroelectric material

被引:13
作者
Idemoto, Y
Miyahara, T
Koura, N
Kijima, T
Ishiwara, H
机构
[1] Sci Univ Tokyo, Fac Sci & Technol, Dept Pure & Appl Chem, Noda, Chiba 2788510, Japan
[2] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan
[3] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
ferroelectrics; crystal structure and symmetry; neutron diffraction; bulk material;
D O I
10.1016/j.ssc.2003.08.003
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigated the crystal structure, physical properties and ferroelectric performance of bulk material obtained by mixing and sintering Bi3.25La0.75Ti3O12 and Bi4Si3O12 or Bi2SiO5 for use as a novel ferroelectric material for ferroelectric memory. The resulting material was identified as a structure whereby, all of the peaks, as determined by powder X-ray and neutron diffraction, were the same as Bi3.25La0.75Ti3O12, and thus a single phase was obtained. Moreover, we investigated the crystal structure of the material by neutron diffraction, and the obtained results suggested that Si is substituted on Ti sites. The resulting material was investigated by SEM, and grains grown relative to Bi3.25La0.75Ti3O12 were observed. Based on P-E hysteresis measurements, this sample has a high remanent polarization (P-r) and a low coercive field (E-c) relative to Bi3.25La0.75Ti3O12, as well as improved overall ferroelectric characteristics. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:255 / 259
页数:5
相关论文
共 6 条
[1]   Preparation of Bi4Ti3O12 thin film on Si(100) substrate using Bi2SiO5 buffer layer and its electric characterization [J].
Kijima, T ;
Matsunaga, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5171-5173
[2]  
Kijima T, 2002, JPN J APPL PHYS 2, V41, pL1164, DOI [10.1143/JJAP.41.L1164, 10.1143/JJAP.41.LL1164]
[3]   Si-substituted ultrathin ferroelectric films [J].
Kijima, T ;
Ishiwara, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (6B) :L716-L719
[4]   Rietveld analysis of intensity data taken on the TOF neutron powder diffractometer VEGA [J].
Ohta, T ;
Izumi, F ;
Oikawa, K ;
Kamiyama, T .
PHYSICA B, 1997, 234 :1093-1095
[5]   Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].
Park, BH ;
Kang, BS ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Jo, W .
NATURE, 1999, 401 (6754) :682-684
[6]   Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by chemical solution deposition [J].
Wu, D ;
Li, AD ;
Zhu, T ;
Liu, ZG ;
Ming, NB .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5941-5945