Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy

被引：102

作者：

Bourlange, A. ^{[1
]}

Payne, D. J. ^{[1
]}

Egdell, R. G. ^{[1
]}

Foord, J. S. ^{[1
]}

Edwards, P. P. ^{[1
]}

Jones, M. O. ^{[1
]}

Schertel, A. ^{[2
]}

Dobson, P. J. ^{[3
]}

Hutchison, J. L. ^{[4
]}

机构：

[1] Univ Oxford, Dept Chem, Chem Res Lab, Oxford OX1 3TA, England

[2] Carl Zeiss SMT AG, D-73447 Oberkochen, Germany

[3] Univ Oxford, Kidlington OX5 1PF, Oxon, England

[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2889500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of In2O3 have been grown on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy with a substrate temperature of 650 degrees C. Ordered epitaxial growth was confirmed by high resolution transmission electron microscopy. The position of the valence band onset in the x-ray photoemission spectra of the epitaxial films is found to be inconsistent with the widely quoted value of 3.75 eV for the fundamental bandgap of In2O3 and suggests a revised value of 2.67 eV. (C) 2008 American Institute of Physics.

引用

页数：3

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