Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs

被引：6

作者：

Gregusova, Dagmar ^{[1
]}

Blaho, Michal ^{[1
]}

Hascik, Stefan ^{[1
]}

Sichman, Peter ^{[1
]}

Laurencikova, Agata ^{[1
]}

Seifertova, Alena ^{[1
]}

Derer, Jan ^{[1
]}

Brunner, Frank ^{[2
]}

Wuerfl, Joachim ^{[2
]}

Kuzmik, Jan ^{[1
]}

机构：

[1] Slovak Acad Sci, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia

[2] Ferdinand Braun Inst, Leibnitz Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2017年 / 214卷 / 11期

关键词：

AlGaN/GaN HEMT; normally-off HEMT; polarization;

D O I：

10.1002/pssa.201700407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The proposal, processing and performance of n(+)GaN/InGaN/AlGaN/GaN normally-off metal-oxide-semiconductor (MOS) HEMTs with a recessed 2-mu m long gate/8-mu m source-drain distance are presented. It is shown that by using a negative polarization charge at the InGaN/AlGaN interface together with 10-nm thick Al2O3 gate insulation, a threshold voltage V-T increases by 3.6V reaching a value of similar to 1.6V. Moreover, the combination of the gate recessing through the n(+)GaN cap and gate insulation lead to an invariant maximal drain current of about 0.25Amm(-1), as well as decreased gate leakage current in the order of similar to 10(-9)Amm(-1). Analytical equations explain the predictive setting of V-T up to 7V with the oxide thickness t(ox) increase, if holes compensate the negative polarization charge. By applying t(ox)=30nm a V-T similar to 3V was obtained; p-doping of the cap/barrier layers is suggested to reach the theoretically predicted scalability.

引用

页数：5

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