Vulnerability evaluation on 16 nm FinFET Ultrascale plus MPSoC using fault injection and proton irradiation

被引:1
作者
Li, Yonghong [1 ]
Yang, Weitao [1 ]
Wang, Maocheng [2 ]
Li, Yang [1 ]
Guo, Yaxin [1 ]
Li, Pei [1 ]
Zhao, Haoyu [1 ]
He, Chaohui [1 ]
Wang, Di [2 ]
Yang, Ye [2 ]
Zhang, Xiaodong [3 ]
An, Heng [4 ]
机构
[1] Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian, Peoples R China
[2] Northwest Insitute Nucl Technol, Xian, Peoples R China
[3] Harbin Inst Technol, Natl Key Lab Mat Behav & Evaluat Technol Space En, Harbin, Peoples R China
[4] Lanzhou Inst Phys, Sci & Technol Vacuum Technol & Phys Lab, Lanzhou, Peoples R China
基金
中国国家自然科学基金;
关键词
Ultrascale plus MPSoC; Vulnerability; Dynamic partial reconfiguration; Fault injection; Proton irradiation; SYSTEM;
D O I
10.1016/j.microrel.2022.114534
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The SEE vulnerability in two ways bitstream loading implementations on a dynamic partial reconfiguration (DPR) design is examined using fault injections and proton irradiations on a Xilinx 16 nm FinFET Ultrascale+ MPSoC. During fault injection, two kinds of soft errors are detected, they are system halt (SH) and calculation result error (CRE). In comparison, the detected errors are only SHs in the 100 and 80 MeV proton irradiations. Also, the critical bit error and cross sections are calculated in the fault injection and proton irradiation, respectively. The results signify that there is almost no difference in SEE vulnerability between the two ways of bitstream loading in DPR design.
引用
收藏
页数:7
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