Recent progress in GaN-based Vertical-Cavity Surface-Emitting Lasers Having Dielectric Distributed Bragg Reflectors

被引：0

作者：

Nakajima, Hiroshi ^{[1
]}

Mitomo, Jugo ^{[1
]}

Fujii, Kentaro ^{[1
]}

Tanaka, Masayuki ^{[1
]}

Ito, Masamichi ^{[1
]}

Ohara, Maho ^{[1
]}

Kobayashi, Noriko ^{[1
]}

Watanabe, Hideki ^{[1
]}

Hamaguchi, Tatsushi ^{[1
]}

Koda, Rintaro ^{[1
]}

Narui, Hironobu ^{[1
]}

机构：

[1] Sony Corp, Display Technol Dev Div, Compound Semicond Dev Dept, Atsugi, Kanagawa 2430014, Japan

来源：

2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The recent progress in GaN-based vertical-cavity surface-emitting lasers (VCSELs) having dielectric distributed Bragg reflectors, including the device characteristics of GaN-based VCSELs with a newly proposed cavity structure incorporating an atomically smooth curved mirror, is overviewed.

引用

页数：2

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