KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

被引：82

作者：

Guo, W. ^{[1
]}

Kirste, R. ^{[1
]}

Bryan, I. ^{[1
]}

Bryan, Z. ^{[1
]}

Hussey, L. ^{[1
]}

Reddy, P. ^{[1
]}

Tweedie, J. ^{[2
]}

Collazo, R. ^{[1
]}

Sitar, Z. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, Apex, NC 27539 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 08期

基金：

美国国家科学基金会;

关键词：

GROWTH; POLAR;

D O I：

10.1063/1.4913705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 24 条

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