KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

被引：79
作者：
Guo, W. [1 ]
Kirste, R. [1 ]
Bryan, I. [1 ]
Bryan, Z. [1 ]
Hussey, L. [1 ]
Reddy, P. [1 ]
Tweedie, J. [2 ]
Collazo, R. [1 ]
Sitar, Z. [1 ]
机构：
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Adroit Mat, Apex, NC 27539 USA
来源：
APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 08期
基金：
美国国家科学基金会;
关键词：
GROWTH; POLAR;
D O I：
10.1063/1.4913705
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 24 条
  • [1] Wet KOH etching of freestanding AlN single crystals
    Bickermann, M.
    Schmidt, S.
    Epelbaum, B. M.
    Heimann, P.
    Nagata, S.
    Winnacker, A.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) : 299 - 307
  • [2] Collazo R., 2011, CLEO SCI INNOVATIONS
  • [3] On the origin of the 265 nm absorption band in AlN bulk crystals
    Collazo, Ramon
    Xie, Jinqiao
    Gaddy, Benjamin E.
    Bryan, Zachary
    Kirste, Ronny
    Hoffmann, Marc
    Dalmau, Rafael
    Moody, Baxter
    Kumagai, Yoshinao
    Nagashima, Toru
    Kubota, Yuki
    Kinoshita, Toru
    Koukitu, Akinori
    Irving, Douglas L.
    Sitar, Zlatko
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (19)
  • [4] Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates
    Dalmau, R.
    Moody, B.
    Schlesser, R.
    Mita, S.
    Xie, J.
    Feneberg, M.
    Neuschl, B.
    Thonke, K.
    Collazo, R.
    Rice, A.
    Tweedie, J.
    Sitar, Z.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (05) : H530 - H535
  • [5] Vacancy compensation and related donor-acceptor pair recombination in bulk AlN
    Gaddy, Benjamin E.
    Bryan, Zachary
    Bryan, Isaac
    Kirste, Ronny
    Xie, Jinqiao
    Dalmau, Rafael
    Moody, Baxter
    Kumagai, Yoshinao
    Nagashima, Toru
    Kubota, Yuki
    Kinoshita, Toru
    Koukitu, Akinori
    Sitar, Zlatko
    Collazo, Ramon
    Irving, Douglas L.
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (16)
  • [6] Comparative study of etching high crystalline quality AlN and GaN
    Guo, W.
    Xie, J.
    Akouala, C.
    Mita, S.
    Rice, A.
    Tweedie, J.
    Bryan, I.
    Collazo, R.
    Sitar, Z.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2013, 366 : 20 - 25
  • [7] Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates
    Guo, Wei
    Bryan, Zachary
    Xie, Jinqiao
    Kirste, Ronny
    Mita, Seiji
    Bryan, Isaac
    Hussey, Lindsay
    Bobea, Milena
    Haidet, Brian
    Gerhold, Michael
    Collazo, Ramon
    Sitar, Zlatko
    [J]. JOURNAL OF APPLIED PHYSICS, 2014, 115 (10)
  • [8] Properties of AlN based lateral polarity structures
    Kirste, Ronny
    Mita, Seiji
    Hoffmann, Marc P.
    Hussey, Lindsay
    Guo, Wei
    Bryan, Isaac
    Bryan, Zachary
    Tweedie, James
    Gerhold, Michael
    Hoffmann, Axel
    Collazo, Ramon
    Sitar, Zlatko
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2, 2014, 11 (02): : 261 - 264
  • [9] Polarity control and growth of lateral polarity structures in AlN
    Kirste, Ronny
    Mita, Seiji
    Hussey, Lindsay
    Hoffmann, Marc P.
    Guo, Wei
    Bryan, Isaac
    Bryan, Zachary
    Tweedie, James
    Xie, Jinqiao
    Gerhold, Michael
    Collazo, Ramon
    Sitar, Zlatko
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (18)
  • [10] Ultraviolet semiconductor laser diodes on bulk AlN
    Kneissl, Michael
    Yang, Zhihong
    Teepe, Mark
    Knollenberg, Cliff
    Schmidt, Oliver
    Kiesel, Peter
    Johnson, Noble M.
    Schujman, Sandra
    Schowalter, Leo J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 101 (12)
123