Fabrication of Sb2S3 thin films by sputtering and post-annealing for solar cells

被引：82

作者：

Gao, Chunhui ^{[1
]}

Huang, Jialiang ^{[2
]}

Li, Huangxu ^{[1
]}

Sun, Kaiwen ^{[2
]}

Lai, Yanqing ^{[1
]}

Jia, Ming ^{[1
]}

Jiang, Liangxing ^{[1
]}

Liu, Fangyang ^{[1
,2
]}

机构：

[1] Cent S Univ, Sch Met & Environm, Changsha 410083, Peoples R China

[2] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia

来源：

CERAMICS INTERNATIONAL | 2019年 / 45卷 / 03期

关键词：

Sb2S3 thin films; Post-annealing conditions; Element distribution; Photoelectric conversion efficiency; IN-SITU GROWTH; OPTICAL-PROPERTIES; ELECTRONIC-STRUCTURE; ABSORBER; EFFICIENCY; PHOTOVOLTAICS; NANOCRYSTALS; TEMPERATURE; DEPOSITION; CUSBS2;

D O I：

10.1016/j.ceramint.2018.10.155

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The semiconductor antimony sulfide (Sb2S3) is a potential absorber materials for the top sub-cell of Si-based tandem solar cells because of its appropriate band-gap, simple binary composition, nontoxic elements, and long-term stability. In this study, polycrystalline Sb2S3 films were fabricated by post-annealing of radio frequency (RF) magnetron sputtered precursors using an Sb2S3 target. The effects of the post-annealing temperature and atmosphere on Sb2S3 film properties and device performances were investigated. A high-performance device having a 2.41% power conversion efficiency was obtained by making use of a uniform Sb2S3 absorber layer. This preliminary experimental study shows that Sb2S3 thin films could be used as top sub-cell absorber materials for third-generation high efficiency, stable, and environmentally friendly Sb2S3/Si tandem solar cells.

引用

页码：3044 / 3051

页数：8

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