Fabrication of YSZ thin films by chemical vapor infiltration using NiO as oxygen source

被引：5
作者：
Kikuchi, K
Okaya, T
Hirose, W
Matsuo, K
Mineshige, A
Ogumi, Z [1 ]
机构：
[1] Univ Shiga Prefecture, Dept Mat Sci, Shiga 5228533, Japan
[2] Himeji Inst Technol, Dept Appl Chem, Himeji, Hyogo 6712201, Japan
[3] Kyoto Univ, Grad Sch Engn, Dept Energy & Hydrocarbon Chem, Sakyo Ku, Kyoto 60601, Japan
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2003年 / 150卷 / 10期
关键词：
D O I：
10.1149/1.1605745
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A yttria-stabilized zirconia (YSZ) film was successfully fabricated by a modified chemical vapor infiltration process at 10001200 1200degreesC on a NiO substrate that also served as an oxygen source. ZrCl4 and YCl3 were used as metal sources. The growth rate of the YSZ film was independent of deposition time but was influenced by the carrier gas flow rate. The oxygen contained in the Ar carrier gas also served as an oxygen source. This oxygen, which adsorbed on the YSZ film surface immediately after the gas supply was turned on, reacted with the metal source gases. The large fluctuation in pressure during each a chemical vapor infiltration cycle was found to enhance the growth rate of YSZ films dramatically. (C) 2003 The Electrochemical Society.
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收藏
页码：C688 / C692
页数：5
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