Reflectance and photoluminescence characterization of CdS and CdSe heteroepitaxial films deposited by laser ablation technique

被引：36

作者：

Perna, G

Capozzi, V

Pagliara, S

Ambrico, M

Lojacono, D

机构：

[1] Univ Bari, Dipartimento Interateneo Fis, I-70126 Bari, Italy

[2] Univ Bari, Ist Nazl Fis Mat, I-70126 Bari, Italy

[3] CNR, Ist Mat Speciali, I-85050 Tito Scalo, PZ, Italy

来源：

THIN SOLID FILMS | 2001年 / 387卷 / 1-2期

关键词：

semiconductors; thin films; optical properties; luminescence; electron-phonon interaction;

D O I：

10.1016/S0040-6090(01)00793-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties of CdSe and CdS films, deposited on sapphire substrate by means of pulsed laser ablation technique, have been investigated in order to study the effect of such a transparent substrate on the photoluminescence efficiency of the deposited epilayers. CdSe and CdS films present intrinsic (excitonic) emission at low temperature, differently from the same films deposited on quartz. The temperature dependence of the excitonic energy has been analyzed taking into account the contribution of both the thermal dilatation and electron-phonon interaction. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：208 / 211

页数：4

共 10 条

[1] Pulsed laser deposition of ZnSxSe1-x and CdSxSe1-x thin films on quartz:: Measurements of energy gap, absorption coefficient and refractive index [J].