Effect of Combined Alkali (KF plus CsF) Post-Deposition Treatment on Cu(InGa)Se2 Solar Cells

被引：23

作者：

Kim, Shinho ^{[1
]}

Tampo, Hitoshi ^{[1
]}

Shibata, Hajime ^{[1
]}

Matsubara, Koji ^{[1
]}

Niki, Shigeru ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2018年 / 12卷 / 10期

关键词：

alkali-PDT; CIGSe; CsF-PDT; post-deposition treatment; thin-film solar cells; CU(IN; GA)SE-2; THIN-FILMS; GRAIN-BOUNDARY; PERFORMANCE; POTASSIUM;

D O I：

10.1002/pssr.201800372

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This study reveals combined alkali (KF+CsF) post-deposition treatment (PDT) effects on a Cu(InGa)Se-2 (CIGSe) cell. Three different alkali-PDTs (KF, CsF, and combined KF+CsF) on CIGSe thin films have been performed. The CIGSe cell with KF-PDT exhibits further reduction in the recombination at the CdS/buffer interface, whereas the CIGSe cell with CsF-PDT exhibits further reduction in the recombination in bulk. In addition, the CIGSe cell with combined alkali-PDT exhibits reduced recombination at both the CdS/CIGSe interface and in bulk compared to all other cells. By applying the combined alkali-PDT, a highly efficient CIGSe device with 20.15% is achieved.

引用

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