Temperature-controlled synthesis of In2Ge2O7 nanowires and their photoluminescence properties

被引：10

作者：

Kim, Sang Sub ^{[1
]}

Park, Jae Young ^{[1
]}

Kim, Hyo Sung ^{[1
]}

Na, Han Gil ^{[1
]}

Yang, Ju Chan ^{[1
]}

Shim, Seung Hyun ^{[1
]}

Lee, Chongmu ^{[1
]}

Park, Doyoung ^{[2
]}

Nam, Dahyun ^{[2
]}

Cheong, Hyeonsik ^{[2
]}

Kim, Hyoun Woo ^{[1
]}

机构：

[1] Inha Univ, Div Mat Sci & Engn, Inchon 402751, South Korea

[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 02期

关键词：

THERMAL EVAPORATION; SILICON NANOWIRES; GERMANATE; NANOSTRUCTURES; GROWTH; NANOBELTS; CHEMISTRY; PHYSICS; OXIDES; PORES;

D O I：

10.1088/0022-3727/44/2/025502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By controlling the heating temperature of a mixture of In and Ge powders, we have obtained monoclinic In2Ge2O7 nanowires at 600-700 degrees C, whereas we have produced cubic In2O3 nanowires at 900 degrees C. The In2Ge2O7 nanowires grown at 600 degrees C were terminated by Au-containing nanoparticles, giving evidence that the vapour-liquid-solid model is the major growth mechanism. With the growth process at 700-900 degrees C being dominated by a vapour-solid process, we have discussed the temperature-induced change in growth mechanisms. Photoluminescence measurements at 10-300K revealed a broad visible emission centred at around 2.5 eV.

引用

页数：7

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