Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNX

被引：0
|
作者：
Kakegami, T. [1 ]
Ohi, S. [1 ]
Sengendo, K. P. [1 ]
Tokuda, H. [1 ]
Kuzuhara, M. [1 ]
机构：
[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan
来源：
2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2014年
关键词：
component; AlGaN/GaN; HEMTs; SiNx; SiO2; current collapse;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNX dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.
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页数：2
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