Study of current collapse in AlGaN/GaN HEMTs passivated with sputter-deposited SiO2 and SiNX

被引：0

作者：

Kakegami, T. ^{[1
]}

Ohi, S. ^{[1
]}

Sengendo, K. P. ^{[1
]}

Tokuda, H. ^{[1
]}

Kuzuhara, M. ^{[1
]}

机构：

[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan

来源：

2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2014年

关键词：

component; AlGaN/GaN; HEMTs; SiNx; SiO2; current collapse;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes comparative study of current collapse in AlGaN/GaN high-electron-mobility transistors (HEMTs) passivated with sputter-deposited SiO2 and SiNX dielectrics. The pulsed I-V measurements are employed to characterize switching response of the devices. It is found that the degree of current collapse for the SiNx-passivated device is superior to that for the SiO2-passivated device.

引用

页数：2