Electronic and optical properties of asymmetric GaAs double quantum dots in intense laser fields

In the present work, we investigated the effect of an intense non-resonant laser field on the electronic structure and the nonlinear optical properties (the light absorption, the optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact-density matrix formalism under the steady state conditions with the use of the effective mass approximation. The obtained results show that: (i) the electronic structure and, consequently, the optical properties are sensitive to the dressed potential; (ii) the changes in the incident light polarisation lead to blue or redshifts in the intraband optical absorption spectrum; (iii) for specific values of the structure parameters and under an intense laser illumination, the asymmetric double quantum dots can be a good candidate for NOR emission of THz radiation.