Electronic and optical properties of asymmetric GaAs double quantum dots in intense laser fields

被引:29
作者
Bejan, D. [1 ]
Niculescu, E. C. [2 ]
机构
[1] Univ Bucharest, Fac Phys, Bucharest, Romania
[2] Univ Politehn Bucuresti, Dept Phys, Bucharest, Romania
关键词
field polarisation; Asymmetric double quantum dot; nonlinear optic; intense laser field; 2ND-HARMONIC GENERATION; RECTIFICATION; WELLS; TRANSITIONS; ABSORPTION; SCATTERING; RADIATION; EXCITONS;
D O I
10.1080/14786435.2016.1154206
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, we investigated the effect of an intense non-resonant laser field on the electronic structure and the nonlinear optical properties (the light absorption, the optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact-density matrix formalism under the steady state conditions with the use of the effective mass approximation. The obtained results show that: (i) the electronic structure and, consequently, the optical properties are sensitive to the dressed potential; (ii) the changes in the incident light polarisation lead to blue or redshifts in the intraband optical absorption spectrum; (iii) for specific values of the structure parameters and under an intense laser illumination, the asymmetric double quantum dots can be a good candidate for NOR emission of THz radiation.
引用
收藏
页码:1131 / 1149
页数:19
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