Lateral composition modulation in strain compensated (GaInP)m(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy

被引：1

作者：

Golmayo, D ^{[1
]}

Dotor, ML ^{[1
]}

Quintana, C ^{[1
]}

机构：

[1] Inst Microelect Madrid, Madrid, Spain

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 253卷 / 1-4期

关键词：

atomic layer epitaxy; superlattices; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(03)01094-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lateral composition modulation of strain compensated (GaInP)(m)(GaInAs)(m) short-period superlattices (SPSL) has been investigated. Transmission electron microscopy results show that long-range lateral composition modulation is formed in m = 2 SPSL grown at 400degreesC by atomic layer molecular beam epitaxy. The evolution of photoluminescence (PL) peak with temperature shows a blue shift with increasing temperature; in addition, low-temperature PL is strongly polarized. These properties are attributed to the lateral composition modulation. Quantum wires (QWRs) were formed using (GaInP)(m)(GaInAs)(m) SPSL as quantum wells in a multiquantum well heterostructure. The formation of QWR is confirmed by their PL properties. (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：167 / 173

页数：7

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