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- [1] Single-Dirac-Cone Topological Surface States in the TlBiSe2 Class of Topological SemiconductorsPHYSICAL REVIEW LETTERS, 2010, 105 (03)Lin, Hsin论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAMarkiewicz, R. S.论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAWray, L. A.论文数: 0 引用数: 0 h-index: 0机构: Princeton Univ, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Princeton Ctr Complex Mat, Princeton, NJ 08544 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAFu, L.论文数: 0 引用数: 0 h-index: 0机构: Harvard Univ, Dept Phys, Cambridge, MA 02138 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAHasan, M. Z.论文数: 0 引用数: 0 h-index: 0机构: Princeton Univ, Joseph Henry Labs Phys, Princeton, NJ 08544 USA Princeton Univ, Princeton Ctr Complex Mat, Princeton, NJ 08544 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USABansil, A.论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USA
- [2] Response of the topological surface state to surface disorder in TlBiSe2NEW JOURNAL OF PHYSICS, 2015, 17Pielmeier, Florian论文数: 0 引用数: 0 h-index: 0机构: Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyLandolt, Gabriel论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanySlomski, Bartosz论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyMuff, Stefan论文数: 0 引用数: 0 h-index: 0机构: Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyBerwanger, Julian论文数: 0 引用数: 0 h-index: 0机构: Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyEich, Andreas论文数: 0 引用数: 0 h-index: 0机构: Univ Hamburg, Dept Phys, D-20355 Hamburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyKhajetoorians, Alexander A.论文数: 0 引用数: 0 h-index: 0机构: Univ Hamburg, Dept Phys, D-20355 Hamburg, Germany Radboud Univ Nijmegen, Inst Mol & Mat, NL-6500 GL Nijmegen, Netherlands Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyWiebe, Jens论文数: 0 引用数: 0 h-index: 0机构: Univ Hamburg, Dept Phys, D-20355 Hamburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyAliev, Ziya S.论文数: 0 引用数: 0 h-index: 0机构: Baku State Univ, Gen & Inorgan Chem Dept, AZ-1148 Baku, Azerbaijan Azerbaijian Natl Acad Sci, Inst Chem Problems, AZ-1143 Baku, Azerbaijan Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyBabanly, Mahammad B.论文数: 0 引用数: 0 h-index: 0机构: Baku State Univ, Gen & Inorgan Chem Dept, AZ-1148 Baku, Azerbaijan Azerbaijian Natl Acad Sci, Inst Chem Problems, AZ-1143 Baku, Azerbaijan Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyWiesendanger, Roland论文数: 0 引用数: 0 h-index: 0机构: Univ Hamburg, Dept Phys, D-20355 Hamburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyOsterwalder, Juerg论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyChulkov, Evgueni V.论文数: 0 引用数: 0 h-index: 0机构: Univ Basque Country, Donostia Int Phys Ctr, E-20080 San Sebastian, Spain Univ Basque Country, CFM MPC, Ctr Mixto CSIC UPV EHU, Dept Fis Mat, E-20080 San Sebastian, Spain Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyGiessibl, Franz J.论文数: 0 引用数: 0 h-index: 0机构: Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, GermanyDil, J. Hugo论文数: 0 引用数: 0 h-index: 0机构: Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany
- [3] Topological electronic structure and Weyl semimetal in the TlBiSe2 class of semiconductorsPHYSICAL REVIEW B, 2012, 86 (11):Singh, Bahadur论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India Northeastern Univ, Dept Phys, Boston, MA 02115 USASharma, Ashutosh论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India Northeastern Univ, Dept Phys, Boston, MA 02115 USALin, H.论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAHasan, M. Z.论文数: 0 引用数: 0 h-index: 0机构: Princeton Univ, Dept Phys, Joseph Henry Lab, Princeton, NJ 08544 USA Princeton Univ, Princeton Ctr Complex Mat, Princeton, NJ 08544 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USAPrasad, R.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India Northeastern Univ, Dept Phys, Boston, MA 02115 USABansil, A.论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Northeastern Univ, Dept Phys, Boston, MA 02115 USA
- [4] Pressure-induced topological crystalline insulating phase in TlBiSe2: Experiments and theoryPHYSICAL REVIEW B, 2023, 107 (20)Rajaji, V.论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Univ Claude Bernard Lyon 1, Univ Lyon, Inst Lumiere Matiere, CNRS, F-69622 Villeurbanne, France Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaArora, Raagya论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaJoseph, B.论文数: 0 引用数: 0 h-index: 0机构: Elettra Sincrotrone Trieste, SS 14,Km 163-5 Area Sci Pk, I-34012 Trieste, Italy Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaRoychowdhury, Subhajit论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaWaghmare, Umesh V.论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Theoret Sci Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaBiswas, Kanishka论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, IndiaNarayana, Chandrabhas论文数: 0 引用数: 0 h-index: 0机构: Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat, Jakkur PO, Bangalore 560064, India Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Jakkur PO, Bangalore 560064, India
- [5] Role of surface termination in realizing well-isolated topological surface states within the bulk band gap in TlBiSe2 and TlBiTe2PHYSICAL REVIEW B, 2016, 93 (08)Singh, Bahadur论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, IndiaLin, Hsin论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, IndiaPrasad, R.论文数: 0 引用数: 0 h-index: 0机构: Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, IndiaBansil, A.论文数: 0 引用数: 0 h-index: 0机构: Northeastern Univ, Dept Phys, Boston, MA 02115 USA Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
- [6] Origin of the isostructural electronic states of the topological insulator Bi2Te3PHYSICAL REVIEW B, 2020, 102 (13)Hong, Xinguo论文数: 0 引用数: 0 h-index: 0机构: Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaNewville, Matt论文数: 0 引用数: 0 h-index: 0机构: Univ Chicago, Consorthan Adv Radiat Sources, Chicago, IL 60637 USA Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaDing, Yang论文数: 0 引用数: 0 h-index: 0机构: Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaZhang, Dongzhou论文数: 0 引用数: 0 h-index: 0机构: Univ Chicago, Consorthan Adv Radiat Sources, Chicago, IL 60637 USA Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaIrifune, Tetsuo论文数: 0 引用数: 0 h-index: 0机构: Ehime Univ, Geodynam Res Ctr, Matsuyama, Ehime 7908577, Japan Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaGu, Genda论文数: 0 引用数: 0 h-index: 0机构: Brookhaven Natl Lab, Condensed Matter Phys & Mat Sci Dept, Upton, NY 11973 USA Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R ChinaMao, Ho-Kwang论文数: 0 引用数: 0 h-index: 0机构: Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USA Ctr High Pressure Sci & Technol Adv Res, Beijing 100094, Peoples R China
- [7] Two-dimensional weak topological insulator with gapless edge states in RhBi2 monolayerPHYSICAL REVIEW B, 2025, 111 (04)Zou, Xiaorong论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaLi, Bingyang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaDai, Ying论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaHuang, Baibiao论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R ChinaNiu, Chengwang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
- [8] Robust topological surface states in Sb2Te3 layers as seen from the weak antilocalization effectPHYSICAL REVIEW B, 2012, 86 (12):Takagaki, Y.论文数: 0 引用数: 0 h-index: 0机构: Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, GermanyGiussani, A.论文数: 0 引用数: 0 h-index: 0机构: Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, GermanyPerumal, K.论文数: 0 引用数: 0 h-index: 0机构: Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, GermanyCalarco, R.论文数: 0 引用数: 0 h-index: 0机构: Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, GermanyFriedland, K. -J.论文数: 0 引用数: 0 h-index: 0机构: Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
- [9] Spin-directed network model for the surface states of weak three-dimensional Z2 topological insulatorsPHYSICAL REVIEW B, 2014, 89 (15):论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [10] Quasi-One-Dimensional Ta2PdSe6 with Strong Topological Surface States for High-Performance and Polarization-Sensitive Terahertz DetectionNANO LETTERS, 2025,Yang, Liu论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaWang, Dong论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaHu, Zhen论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaDong, Zhuo论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaZhang, Yan论文数: 0 引用数: 0 h-index: 0机构: Yangtze Memory Technol Co Ltd, Wuhan 430074, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaTang, Keqin论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaWang, Pengdong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaZhang, Junrong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaChen, Cheng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaHou, Xingang论文数: 0 引用数: 0 h-index: 0机构: Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaLi, Jie论文数: 0 引用数: 0 h-index: 0机构: Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong 999077, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaYu, Qiang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaWang, Junyong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaWang, Lin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R ChinaZhang, Kai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Key Lab Semicond Display Mat & Chips, Suzhou 215123, Peoples R China Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, I Lab, Suzhou 215123, Peoples R China Univ Sci & Technol China, Sch Nanotech & Nanob, Hefei 230026, Peoples R China