Improved stability of intrinsic nanocrystalline Si thin films deposited by hot-wire chemical vapour deposition technique

被引：15
作者：
Halindintwali, S.
Knoesen, D.
Swanepoel, R.
Julies, B. A.
Arendse, C.
Muller, T.
Theron, C. C.
Gordijn, A.
Bronsveld, P. C. P.
Rath, J. K.
Schropp, R. E. I.
机构：
[1] Univ Western Cape, Dept Phys, ZA-7535 Bellville, South Africa
[2] iThemba LABS, Mat Res Grp, ZA-7129 Somerset W, South Africa
[3] Univ Utrecht, SID Phys Devices, NL-3508 TA Utrecht, Netherlands
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 20-21期
基金：
新加坡国家研究基金会;
关键词：
hot-wire deposition; amorphous material; nanocrystalline silicon; grain boundary; photoconductivity; activation energy; light soaking; passivation;
D O I：
10.1016/j.tsf.2007.03.051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results of photoresponse, activation energy and light soaking measurements on selected hydrogenated nanocrystalline Si thin films are presented. The films were deposited by hot-wire chemical vapour deposition. Values of photoresponse better than I X 102 were obtained. They are lower for porous material as the crystalline volume fraction increases. Activation energy results are related to the intrinsic character and the microstructure of the films. Light soaking experiments show that the nanocrystalline films are very stable. Their amorphous counterparts attain a stable photoconductivity value after 300 h of illumination. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：8040 / 8044
页数：5
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