Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane

被引：34

作者：

Vincent, B. ^{[1
]}

Loo, R. ^{[1
]}

Vandervorst, W. ^{[1
,2
]}

Brammertz, G. ^{[1
]}

Caymax, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT INSYS, B-3001 Louvain, Belgium

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 19期

关键词：

Crystal structure; Desorption; Chemical vapor deposition processes; Semiconducting silicon; Field effect transistors; GROWTH; SILICON; FILMS;

D O I：

10.1016/j.jcrysgro.2010.06.013

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature ( < 700 degrees C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600-650 and 500 degrees C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate ( > 5 angstrom/min). Trisilane permits the growth of Si at lower temperatures below 350 degrees C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 degrees C are defective, irrespective of the carrier gas, pressure and precursor flow used. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2671 / 2676

页数：6

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