RF CMOS on high-resistivity substrates for system-on-chip applications

被引：67

作者：

Benaissa, K ^{[1
]}

Yang, JY ^{[1
]}

Crenshaw, D ^{[1
]}

Williams, B ^{[1
]}

Sridhar, S ^{[1
]}

Ai, J ^{[1
]}

Boselli, G ^{[1
]}

Zhao, S ^{[1
]}

Tang, SP ^{[1
]}

Ashburn, S ^{[1
]}

Madhani, P ^{[1
]}

Blythe, T ^{[1
]}

Mahalingam, N ^{[1
]}

Shichijo, H ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 03期

关键词：

D O I：

10.1109/TED.2003.810470

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SOC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation., We also discuss the integration issues including latch-up and well-well isolation in a 0.35-mum Cu metal pitch, 0.1-mum-gate-length RF CMOS technology.

引用

页码：567 / 576

页数：10

共 34 条

[1] On the use of MOS varactors in RF VCO's [J].

Andreani, P ;

Mattisson, S .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (06) :905-910

[2]

BURGHARTZ JN, 2001, P DEV RES C, P113

[3]

BURGHARTZ JN, 1997, P EUR SOL STAT DEV R, P143

[4]

Buss D., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P423, DOI 10.1109/IEDM.1999.824184

[5]

BUSS D, 2000, IEEE T ELECTRON DEV, V50, P546

[6]

CHAN HHY, 2001, P IEEE MIDW S CIRC S, V1, P154

[7]

CHATTERJEE A, 1999, S VLSI, P147

[8]

CHATTERJEE A, 2001, IEDM, P211

[9] A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology [J].

Colvin, JT ;

Bhatia, SS ;

O, KK .

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 1998, :109-112

[10] A 2.4-GHz CMOS transceiver for bluetooth [J].

Darabi, H ;

Khorram, S ;

Chien, HM ;

Pan, MA ;

Wu, S ;

Moloudi, S ;

Leete, JC ;

Rael, JJ ;

Syed, M ;

Lee, R ;

Ibrahim, B ;

Rofougaran, M ;

Rofougaran, A .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (12) :2016-2024

← 1 2 3 4 →