A Wideband Multi-Stage Amplifier with Low Group-Delay Variation Using Transistors with Low Nodal Quality Factors in Sub-Terahertz Band

被引:1
作者
Sahara, Kenta [1 ]
Takano, Kyoya [1 ]
Hara, Shinsuke [2 ]
Kasamatsu, Akifumi [2 ]
Umeda, Yohtaro [1 ]
机构
[1] Tokyo Univ Sci, Dept Elect Engn, 2641 Yamazaki, Noda, Chiba, Japan
[2] Natl Inst Informat & Commun Technol, Adv ICT Res Inst, 4-2-1 Nukuikita Machi, Koganei, Tokyo, Japan
来源
2021 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2021年
关键词
Group delay; multi-stage amplifier; nodal quality factor; SiGe BiCMOS; sub-terahertz band;
D O I
10.1109/IMaRC49196.2021.9714671
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a simple way to increase the bandwidth and reduce the group-delay variation of a multi-stage amplifier in the sub-terahertz range. The method is to use transistors with low nodal quality factors [3] for the amplifier. To verify the proposed method, a four-stage amplifier is fabricated using a 0.13 mu m SiGe BiCMOS process. The amplifier has the maximum gain of 5.42 dB, the 3 dB bandwidth of over 30 GHz, and the maximum group-delay variation of 12.8 ps.
引用
收藏
页数:4
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