50 nm MHEMT technology for G- and H-band MMICs

被引：70

作者：

Leuther, Arnulf ^{[1
]}

Tessmann, Axel ^{[1
]}

Dammann, Michael ^{[1
]}

Schwoerer, Christoph ^{[1
]}

Schlechtweg, Michael ^{[1
]}

Mikulla, Michael ^{[1
]}

Losch, Rainer ^{[1
]}

Weimann, Gunter ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.380680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A metamorphic HEMT (MHEMT) MMIC technology including circuit applications is presented. The MHEMT layers are MBE grown on 4-inch GaAs wafers. The technology is based on a 50 nrn gate length MHEMT and includes a 50 mu m substrate backside process with dry etched through-substrate vias. For the electron confinement an In0.8Ga0.2As/In0.53Ga0.47 As composite channel was used. The devices are passivated with BCB and SiN to achieve a median time-to-failure of 2.7 x 10(5) h in air. Cut-off frequencies f(t) and f(max) of 375 GHz were extrapolated for a 2 x 15 pm gate width device. Low-noise amplifiers with more than 15 dB gain in the frequency range from 192 GHz to 235 GHz were realized.

引用

页码：24 / 27

页数：4

共 8 条

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