Removal of misfit dislocations from mismatched layers in heterostructures

The method of the misfit dislocation removal from working area of the devices on heterostructures is theoretically offered. The chainlet of the edge dislocation (one-dimensional soliton-soliton bound state) is formed in substrate and film border by special preliminary processing. The stress field of such chainlet pushes away. misfit dislocation incipient on the borders of the heterostructures. By numerical experiment it is shown that the stress field of a chainlet is compressed in a sliding direction and it increases in a perpendicular direction, when the velocity is increased. It is possible to influence locally on the given dislocation varying the parameters of the system.