Removal of misfit dislocations from mismatched layers in heterostructures

被引：0
|
作者：
Arakelyan, Mileta M. [1 ]
机构：
[1] Yerevan State Univ, Dept Phys, Chair Solid State Phys, Yerevan 0025, Armenia
来源：
PHOTONICS AND MICRO- AND NANO-STRUCTURED MATERIALS 2011 | 2012年 / 8414卷
关键词：
misfit dislocation; topological soliton; two-soliton chain; heterostructure;
D O I：
10.1117/12.923228
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The method of the misfit dislocation removal from working area of the devices on heterostructures is theoretically offered. The chainlet of the edge dislocation (one-dimensional soliton-soliton bound state) is formed in substrate and film border by special preliminary processing. The stress field of such chainlet pushes away. misfit dislocation incipient on the borders of the heterostructures. By numerical experiment it is shown that the stress field of a chainlet is compressed in a sliding direction and it increases in a perpendicular direction, when the velocity is increased. It is possible to influence locally on the given dislocation varying the parameters of the system.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems
    Jain, SC
    Harker, AH
    Cowley, RA
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1997, 75 (06): : 1461 - 1515
  • [2] Generation of misfit dislocations in highly mismatched GaN/AlN layers
    Bai, J.
    Wang, T.
    Lee, K. B.
    Parbrook, P. J.
    Wang, Q.
    Cullis, A. G.
    SURFACE SCIENCE, 2008, 602 (15) : 2643 - 2646
  • [3] Generation of Misfit Dislocations in Highly Mismatched GaN/AlN Layers
    Bai, J.
    Wang, T.
    Parbrook, P. J.
    Lee, K. B.
    Wang, Q.
    Cullis, A. G.
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2007, 2008, 120 : 33 - 36
  • [4] Relaxation of low mismatched semiconducting layers by misfit dislocations: Models and observations
    Pichaud, B.
    Putero, M.
    Burle, N.
    Journal De Physique. IV : JP, 1998, 8 (04): : 227 - 236
  • [5] Relaxation of low mismatched semiconducting layers by misfit dislocations: models and observations
    Pichaud, B
    Putero, M
    Burle, N
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P4): : 227 - 236
  • [6] Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures
    Yastrubchak, O
    Wosinski, T
    Figielski, T
    Lusakowska, E
    Pecz, B
    Toth, AL
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 561 - 563
  • [7] Multi-soliton method for removal of misfit dislocations from functional area of heterostructures
    M. M. Arakelyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2016, 51 : 380 - 385
  • [8] Misfit dislocations in nanowire heterostructures
    Kavanagh, Karen L.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (02)
  • [9] IN-SITU OBSERVATIONS OF MISFIT DISLOCATIONS IN LATTICE-MISMATCHED EPITAXIAL SEMICONDUCTOR HETEROSTRUCTURES
    HULL, R
    BEAN, J
    MRS BULLETIN, 1994, 19 (06) : 32 - 37
  • [10] Multi-Soliton Method for Removal of Misfit Dislocations from Functional Area of Heterostructures
    Arakelyan, M. M.
    JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES, 2016, 51 (04) : 380 - 385
12345