Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum

被引：15
作者：
Benyoucef, M.
Rastelli, A.
Schmidt, O. G.
Ulrich, S. M.
Michler, P.
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Phys Inst 5, D-70550 Stuttgart, Germany
来源：
NANOSCALE RESEARCH LETTERS | 2006年 / 1卷 / 02期
关键词：
GaAs quantum dots; hierarchical self-assembly; single dot spectroscopy; room temperature luminescence; photon correlation;
D O I：
10.1007/s11671-006-9019-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (approximate to 8.5 meV) is comparable to the ensemble inhomogeneous broadening (approximate to 12.4 meV). At low temperature (T <= 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
引用
收藏
页码：172 / 176
页数：5
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