Low-temperature low-pressure die attach with hybrid silver particle paste

被引：240

作者：

Suganuma, K. ^{[1
]}

Sakamoto, S. ^{[1
]}

Kagami, N. ^{[1
]}

Wakuda, D. ^{[1
]}

Kim, K. -S. ^{[1
]}

Nogi, M. ^{[1
]}

机构：

[1] Osaka Univ, ISIR, Osaka 5670047, Japan

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 02期

关键词：

SILICON-CARBIDE; POWER DEVICES; ELECTRONICS;

D O I：

10.1016/j.microrel.2011.07.088

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

New types of die attach pastes comprising micron-sized Ag particles hybridized with submicron-sized Ag particles were considered as lead-free die attach materials for SiC power semiconductors. Micron-sized Ag particles in alcohol solvent were prepared by mixing the die attach paste with submicron-sized Ag particles. The alcohol vaporizes completely during sintering and no residue exists in the bonding layer. The Ag layer has a uniform porous structure. The electrical resistivity of the printed tracks decreases below 1 x 10(-5) Omega cm when sintered above 200 degrees C. When sintered at 200 degrees C for 30 min, the average resistivity reaches 5 x 10(-6) Omega cm, which is slightly higher than the value obtained by using Ag nanoparticle paste. A SiC die was successfully bonded to a direct bonded copper substrate and the die-shear strength gradually increases with the increase in bonding temperature up to 300 degrees C. The Ag die attach bond layer was stable against thermal cycles between -40 degrees C and 300 degrees C. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：375 / 380

页数：6

共 23 条

[1] Silver Nanoparticle Paste for Low-Temperature Bonding of Copper [J].