Dependence of Cu(In,Ga)Se2 Solar Cell Performance on Cd Solution Treatment Conditions

被引：3

作者：

Park, Sang-Wook ^{[1
]}

Park, Soon-Yong ^{[1
]}

Lee, Eun-Woo ^{[1
]}

Jung, Woo-Jin ^{[1
]}

Jeon, Chan-Wook ^{[1
]}

Chung, Yong-Duck ^{[2
]}

Park, Nae-Man ^{[2
]}

Kim, Jeha ^{[2
]}

机构：

[1] Yeungnam Univ, Dept Chem Engn & Technol, Gyongsan 712749, South Korea

[2] Elect & Telecommun Res Inst, Thin Film Solar Cell Technol Res Team, Taejon 305700, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2011年 / 551卷

基金：

新加坡国家研究基金会;

关键词：

CIGS Solar Cell; Chemical Bath Deposition; CdS; THIN-FILMS;

D O I：

10.1080/15421406.2011.600659

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In the current study, chemical bath deposition (CBD) was used to grow CdS thin films on a Cu(In,Ga)Se2 (CIGS) absorption layer, in order to examine the effects of CdS deposition conditions on the properties of CIGS solar cell devices. The dip time leading up to the start of CdS synthesis is thought to be an important process variable determining the concentration of Cd ions diffused into the CIGS as well as the condition of the CIGS surface. Accordingly, the behavior of the CIGS solar cell efficiency variation was observed while different dip times were applied, at 4, 15 and 30 minutes, respectively. When the dip time was extended, the series resistance (Rs) of the device fell by a substantial margin, leading to improved photoelectric conversion efficiency and enhanced uniformity in device properties. This can be attributed to the effect of CIGS surface cleaning by the NH4OH contained in the reaction solution.

引用

页码：221 / 227

页数：7

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