Low-temperature photoluminescence studies of In-rich InAlN nanocolumns

被引：9

作者：

Kamimura, Jumpei ^{[1
]}

Kishino, Katsumi ^{[1
,2
]}

Kikuchi, Akihiko ^{[1
,2
]}

机构：

[1] Sophia Univ, Dept Engn & Appl Sci, Chiyoda Ku, Tokyo 1028554, Japan

[2] Sophia Univ, Sophia Nanotechnol Res Ctr, Chiyoda Ku, Tokyo 1028554, Japan

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2012年 / 6卷 / 03期

关键词：

nanocolumns; nanowires; InAlN; photoluminescence; molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; MULTIPLE-QUANTUM WELLS; FUNDAMENTAL-BAND GAP; OPTICAL-PROPERTIES; LOCALIZED EXCITONS; NITRIDE ALLOYS; WURTZITE INN; GROWTH; DEPENDENCE;

D O I：

10.1002/pssr.201105564

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality Inx Al1xN (0.71 = xIn = 1.00) nanocolumns (NCs) have been grown on Si(111) substrates by rf-plasma-assisted molecular-beam epitaxy (rf-MBE). Low-temperature photoluminescence (LT-PL) spectra of various In-rich InAlN NCs were measured at 4 K and single peak PL emissions were observed in the wavelength region from 0.89 mu m to 1.79 mu m. Temperature-dependent PL spectra of In0.92Al0.08N NCs were studied and the so-called S-shape (decreaseincreasedecrease) PL peak energy shift was observed with increasing temperature. This shift indicates the carrier localization induced by the In segregation effect and is different from the anomalous blue shift frequently observed in InN films and nanowires with high residual carrier concentra- tions. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：123 / 125

页数：3

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