Oxidation Mechanism of Cu2O and Defect Structure of CuO at High Temperatures

被引：41

作者：

Grzesik, Zbigniew ^{[1
]}

Migdalska, Monika ^{[1
]}

机构：

[1] AGH Univ Sci & Technol, Fac Mat Sci & Ceram, Dept Solid State Chem, PL-30059 Krakow, Poland

来源：

HIGH TEMPERATURE MATERIALS AND PROCESSES | 2011年 / 30卷 / 4-5期

关键词：

CuO; mechanism of the reaction; kinetics; defect structure; OXIDE THIN-FILMS; COPPER-OXIDE; POINT-DEFECTS; GROWTH MECHANISMS; CRYSTAL-GROWTH; NONSTOICHIOMETRY; TRANSPORT; KINETICS; THERMODYNAMICS; SCALES;

D O I：

10.1515/HTMP.2011.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kinetics and mechanism of Cu2O oxidation have been studied as a function of temperature (9731273 K) and oxygen pressure (1-10(5) Pa), using microthermogravimetric and marker techniques. It has been found that in early stages not exceeding 30 hours, CuO formation follows approximately cubic rate law and in later stages, the process can be described by parabolic kinetics with the rate being independent of Cu2O pretreatment. Marker experiments, confirmed by two-stage oxidation studies, have demonstrated that the growth process of CuO layer on the surface of Cu2O proceeds by the outward diffusion of cations, clearly indicating that the cation sublattice of CuO is predominantly defected. These results together with kinetic and nonstoichiometry data strongly suggest that in addition to intrinsic electronic disorder (i.e. electron holes and quasi-free electrons), doubly ionized cation vacancies are the prevailing ionic defects in this oxide.

引用

页码：277 / 287

页数：11

共 53 条

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