Surface evolution of NaCl-type cubic AlN films on MgO (100) substrates deposited by laser molecular beam epitaxy

被引：13

作者：

Fu, Yuechun ^{[1
]}

Zhang, Yao ^{[1
]}

Yang, Weijia ^{[1
]}

He, Huan ^{[1
]}

Shen, Xiaoming ^{[1
]}

机构：

[1] Guangxi Univ, Coll Mat Sci & Engn, Minist Educ, Key Lab New Proc Technol Mat & Nonferrous Met, Nanning 530004, Guangxi, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 343卷 / 01期

关键词：

Crystal structure; Surfaces; Laser epitaxy; Molecular beam epitaxy; Nitrides; Semiconducting III-V materials; THIN-FILMS; MORPHOLOGY; GROWTH;

D O I：

10.1016/j.jcrysgro.2012.01.030

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly oriented NaCl-type cubic AlN (c-AlN) films were successfully deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique, and the time-dependent evolution of film surface was characterized. Based on the topography images and roughness analysis, c-AlN surfaces display the Stranski-Krastanov growth mode. In the initial stage, AlN adatoms prefer to settle along the substrate steps and the surface appears to be slightly rough. The following deposition causes an undulate surface, and the nucleation and early growth of 3D islands are observed. During the islands growth, a rapid increase of roughness occurs, and large and deep gaps on the top of islands are striking. A smooth surface with a roughness of 1.06 nm is obtained at the growth time of 2 h owing to the spread and coalescence of islands. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：28 / 32

页数：5

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