Growth and structural analysis of thin films and epitaxial heterostructures of Pb(Zr0.52Ti0.48)O3 deposited on SrTiO3 and Al2O3 by laser ablation

被引:0
作者
Le Marrec, F [1 ]
Maréchal, C [1 ]
Steinseth, RK [1 ]
Karkut, MG [1 ]
机构
[1] Univ Picardie, Phys Mat Condensee Lab, F-80039 Amiens, France
来源
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS | 1998年 / 53卷 / 289期
关键词
ferroelectric heterostructures; PZT; laser ablation; RHEED;
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have successfully grown in situ, by laser ablation, the following Pb (Zr0.52Ti0.48)O-3 (PZT) based heterostructures : 1. Pb (ZT(0.52)Ti(0.48))O-3/(100) SrTiO3 (PZT/STO), 2. Pb(Zr0.52Ti0.48)O-3 / Yba(2)CuO(7) / CeO2 / (1102)Al2O3 (PZT/YBCO/CeO2/Al2O3), 3. Pb(Zr0.52Ti0.48)O-3 / Yba(2)Cu(3)O(7) / (100) SrTiO3 (PST/BCO/STO). CeO2 is used as buffer layer and YBCO as a bottom electrode. By combining RHEED (Reflection High Energy Electron Diffraction) and x-ray diffraction we have determined that : (a) all the buffer and electrode layers are atomically flat, (b) PZT grows in the 2D to 3D Stransky-Krastanov mode, (c) there is an epitaxial relationship between the in-plane axes of the layers and the substrates, (d) (d) the c-axis of PZT is perpendicular to the plane of the film.
引用
收藏
页码:601 / +
页数:8
相关论文
共 5 条
[1]   High crystalline quality CeO2 buffer layers epitaxied on (1(1)under-bar-02) sapphire for YBa2Cu3O7 thin films [J].
Castel, X ;
Guilloux-Viry, M ;
Perrin, A ;
Lesueur, J ;
Lalu, F .
JOURNAL OF CRYSTAL GROWTH, 1998, 187 (02) :211-220
[2]  
Jaffe B., 1971, PIEZOELECTRIC CERAMI
[3]  
KARKUT M, IN PRESS FERROELECTR
[4]   DOMINANT FACTORS FOR FORMATION OF PEROVSKITE PBTIO3 FILMS USING EXCIMER-LASER ABLATION [J].
TANAKA, H ;
TABATA, H ;
KAWAI, T ;
KAWAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (3B) :L451-L454
[5]   Growth and structural properties of epitaxial Pb(ZrxTi1-x)O-3 films and Pb(ZrxTi1-x)O-3-cuprate heterostructures [J].
Triscone, JM ;
Frauchiger, L ;
Decroux, M ;
Mieville, L ;
Fischer, O ;
Beeli, C ;
Stadelmann, P ;
Racine, GA .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4298-4305