Advances in the application of modulation spectroscopy to vertical cavity structures

被引:26
作者
Hosea, TJC [1 ]
机构
[1] Univ Surrey, Dept Phys, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
关键词
optoelectronics; characterisation; optical (modulated reflectivity) spectroscopy; microcavities;
D O I
10.1016/j.tsf.2003.10.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Modulated reflectance is a straightforward technique in which the reflectivity spectrum of a semiconductor is perturbed by an external periodic influence-most usefully a chopped laser beam, i.e. photo-modulated reflectance (PR). Since samples need no special mounting, can be studied in air at room-temperature and can be full-sized pre-fabrication wafers, PR is truly non-destructive. In contrast to conventional photo-luminescence, PR spectra are often replete with sharp, detailed derivative-like features arising from ground-state, and other possible higher-energy optical transitions within a sample, from which can be extracted material parameters crucial to successful and efficient device operation, such as compositions, layer thicknesses, built-in electric fields and band line-ups. The paper discusses the advances made by our group in the application and interpretation of modulation spectroscopy of vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes, which so far have defied analysis by the more conventional non-destructive techniques. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:3 / 13
页数:11
相关论文
共 31 条
[1]  
[Anonymous], 2021, VERTICAL EXTERNAL CA, DOI DOI 10.1002/9783527807956
[2]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[3]  
Berger PD, 1996, APPL PHYS LETT, V68, P4, DOI 10.1063/1.116753
[4]  
BLUME G, UNPUB
[5]   Postgrowth nondestructive characterization of dilute-nitride VCSELs using electroreflectance spectroscopy [J].
Choulis, SA ;
Hosea, TJC ;
Ghosh, S ;
Klar, PJ ;
Hofmann, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (08) :1026-1028
[6]   Electronic structure of InyGa1-yAs1-xNx/GaAs multiple quantum wells in the dilute-N regime from pressure and k•p studies -: art. no. 165321 [J].
Choulis, SA ;
Hosea, TJC ;
Tomic, S ;
Kamal-Saadi, M ;
Adams, AR ;
O'Reilly, EP ;
Weinstein, BA ;
Klar, PJ .
PHYSICAL REVIEW B, 2002, 66 (16) :1-9
[7]   Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k•p studies [J].
Choulis, SA ;
Tomic, S ;
O'Reilly, EP ;
Hosea, TJC .
SOLID STATE COMMUNICATIONS, 2003, 125 (3-4) :155-159
[8]   Influence of varying N-environments on the properties of (GaIn)(NAs) vertical-cavity surface-emitting lasers [J].
Choulis, SA ;
Hosea, TJC ;
Klar, PJ ;
Hofmann, M ;
Stolz, W .
APPLIED PHYSICS LETTERS, 2001, 79 (26) :4277-4279
[9]   Growth characterisation of InxGa1-xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance [J].
Choulis, SA ;
Hosea, TJC .
IEE PROCEEDINGS-OPTOELECTRONICS, 2001, 148 (01) :49-53
[10]   Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers [J].
Constant, SB ;
Tomic, S ;
Lock, D ;
Sale, TE ;
Sweeney, SJ ;
Hosea, TJC .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :9446-9455