Structural, electrical and optical properties of carbon-doped CdS thin films prepared by pulsed-laser deposition

被引：38

作者：

Orlianges, J. C. ^{[1
]}

Champeaux, C. ^{[1
]}

Dutheil, P. ^{[1
]}

Catherinot, A. ^{[1
]}

Mejean, T. Merle ^{[1
]}

机构：

[1] SPCTS UMR CNRS 6638, F-87060 Limoges, France

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

关键词：

Carbone-doped CdS; Cadmium sulfide; Pulsed laser deposition; PLD; In-situ doping; photoconduction; Excimer laser; X ray diffraction; Raman; Electrical properties; Thin film deposition; Absorption coefficient; Direct band-gap; Resistivity; CADMIUM-SULFIDE; RAMAN-SCATTERING; TEMPERATURE; NANOCRYSTALS;

D O I：

10.1016/j.tsf.2010.12.139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdS compounds have attracted interest due to their applications in optoelectronic devices such as solar cells and optical switches. The efficiency of these devices strongly depends on homogeneity, structural quality and morphology of the layers. The purpose of this work is to develop pure and carbon-doped CdS thin films on glass substrates, using pulsed laser deposition (PLO) process at relatively low deposition temperature. A computer controlled multi-target system allows the deposition of ITO conductive films as well as the one of pure or doped CdS films. In this case, predefined precise sequences of laser shots (KrF, wavelength 248 nm, pulse duration 20 ns) on the CdS and vitreous carbon targets, respectively lead to a well controlled carbon doping of deposited CdS films. Structural and chemical characteristics of the films and the multilayers investigated using XRD and Raman spectroscopy as well as optical and electrical properties are studied as a function of PLO deposition parameters and carbon doping. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7611 / 7614

页数：4

共 27 条

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