Mechanism of mobility increase of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma irradiation

被引：47

作者：

Kurakin, A. M. ^{[1
,2
]}

Vitusevich, S. A. ^{[1
,2
]}

Danylyuk, S. V. ^{[1
,2
]}

Hardtdegen, H. ^{[1
,2
]}

Klein, N. ^{[1
,2
]}

Bougrioua, Z. ^{[3
]}

Danilchenko, B. A. ^{[4
]}

Konakova, R. V. ^{[5
]}

Belyaev, A. E. ^{[5
]}

机构：

[1] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[2] Forschungszentrum Julich, CNI Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] Ctr Rech Heteroepitaxie & Applicat, CNRS, F-06560 Valbonne, France

[4] NASU, Inst Phys, UA-03028 Kiev, Ukraine

[5] NASU, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 08期

关键词：

D O I：

10.1063/1.2903144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of a small dose of gamma irradiation on transport characteristics of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures was investigated. It is shown that the carrier concentration remains practically unchanged after an irradiation dose of 10(6) rad, while the 2DEG mobility exhibits a considerable increase. The results are explained within a model that takes into account the relaxation of elastic strains and structural-impurity ordering occurring in the barrier layer under irradiation. (C) 2008 American Institute of Physics.

引用

页数：5

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