Dopant-controlled single-electron pumping through a metallic island

被引：8

作者：

Wenz, Tobias ^{[1
]}

Hohls, Frank ^{[1
]}

Jehl, Xavier ^{[2
,3
]}

Sanquer, Marc ^{[2
,3
]}

Barraud, Sylvain ^{[2
,4
]}

Klochan, Jevgeny ^{[5
]}

Barinovs, Girts ^{[5
]}

Kashcheyevs, Vyacheslavs ^{[5
]}

机构：

[1] Phys Tech Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] CEA INAC PHELIQS, F-38000 Grenoble, France

[4] CEA Leti Minatec, F-38000 Grenoble, France

[5] Univ Latvia, Fac Math & Phys, Zellu St 25, LV-1002 Riga, Latvia

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 21期

关键词：

SILICON; AMPERE; ATOM;

D O I：

10.1063/1.4951679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations. Published by AIP Publishing.

引用

页数：4

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