Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

被引：7
作者：
Wagener, Magnus C. [1 ]
Montesdeoca, Denise [2 ]
Lu, Qi [2 ]
Marshall, Andrew R. J. [2 ]
Krier, Anthony [2 ]
Botha, J. R. [1 ]
Carrington, Peter J. [3 ]
机构：
[1] Nelson Mandela Univ, Dept Phys, Port Elizabeth, South Africa
[2] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England
[3] Univ Lancaster, Dept Engn, Lancaster LA1 4YW, England
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2019年 / 189卷
基金：
新加坡国家研究基金会;
关键词：
Quantum dot solar cell; Intermediate band; Optoelectronic properties; Capture cross-section; Interband; Intraband; DOTS; LOCALIZATION; TRANSITIONS; ENERGY;
D O I：
10.1016/j.solmat.2018.07.030
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.
引用
收藏
页码：233 / 238
页数：6
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