Adsorption of water on stepped Si(100) surface

被引：5
|
作者：
Salman, SA [1 ]
Katircioglu, S [1 ]
机构：
[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey
来源：
SURFACE SCIENCE | 1998年 / 416卷 / 1-2期
关键词：
adsorption kinetics; semi-empirical models and model calculations; silicon; single crystal surfaces; surface roughening; water;
D O I：
10.1016/S0039-6028(98)00440-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated possible water forms on stepped Si(100) surface. Calculations are performed by using the empirical tight-binding method. Two types of adsorption model of water on stepped Si(100) surface have been considered; one of them is the dissociative type (H, OH) and the other is the molecular type (H2O). The results of the density of states supported by total electronic energy calculations indicate a dissociative type of water adsorption on the stepped Si(100) surface. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：9 / 16
页数：8
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