Robustness of ultrathin aluminum oxide dielectrics on Si(001)

被引：115

作者：

Copel, M ^{[1
]}

Cartier, E ^{[1
]}

Gusev, EP ^{[1
]}

Guha, S ^{[1
]}

Bojarczuk, N ^{[1
]}

Poppeller, M ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 18期

关键词：

D O I：

10.1063/1.1367902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stability of Al2O3 films during thermal processing will help determine their usefulness as an alternative gate dielectric for advanced complementary metal-oxide-semiconductor devices. We used medium energy ion scattering and atomic force microscopy to examine the degradation of ultrathin Al2O3 layers under ultrahigh vacuum annealing and the effects of low-temperature oxidation. No degradation is observed at 900 degreesC, but voids appear at higher temperatures. Growth of interfacial SiO2 takes place during low-pressure oxidation at 600 degreesC, which may limit the capacitance of extremely thin structures. (C) 2001 American Institute of Physics.

引用

页码：2670 / 2672

页数：3

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