共 46 条
- [1] ETCHING OF THERMALLY GROWN SIO2 BY NH4OH IN MIXTURE OF NH4OH AND H2O2 CLEANING SOLUTION JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7A): : 4080 - 4085
- [2] Etching of thermally grown SiO2 by NH4OH in mixture of NH4OH and H2O2 cleaning solution Kaigawa, Hiroyuki, 1600, JJAP, Minato-ku, Japan (33):
- [3] ISOLATED NANOMETER-SIZE SI DOT ARRAYS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY, REACTIVE ION ETCHING, AND WET ETCHING IN NH4OH/H2O2/H2O JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (12B): : L1796 - L1798
- [4] Reaction of ozone and H2O2 in NH4OH solutions and their reaction with silicon wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (6A): : 3335 - 3339
- [5] Reaction of ozone and H2O2 in NH4OH solutions and their reaction with silicon wafers Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (6 A): : 3335 - 3339
- [8] The reaction of ozone and H2O2 in ammonium hydroxide (NH4OH) solutions and their reaction with silicon wafers CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 288 - 295
- [9] Rapid fabrication of silver microplates under an oxidative etching environment consisting of O2/Cl-, NH4OH/H2O2, and H2O2 CRYSTENGCOMM, 2015, 17 (29): : 5530 - 5537
- [10] THE RELATIONSHIP OF THE SILICON SURFACE-ROUGHNESS AND GATE OXIDE INTEGRITY IN NH4OH/H2O2 MIXTURES JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11A): : L1514 - L1517