Structural, optical and electrical properties of SnO2:Sb:Tb3+ /porous silicon devices

被引：16

作者：

Moadhen, A ^{[1
]}

Elhouichet, H

Romdhane, S

Oueslati, M

Roger, JA

Bouchriha, H

机构：

[1] Fac Sci Tunis, Dept Phys, Phys Mat Condensee Lab, Tunis 2092, Tunisia

[2] Fac Sci Bizerte, Dept Phys, Zarzouna 7021, Bizerte, Tunisia

[3] Univ Lyon 1, UMR CNRS 5586, Phys Mat Condensee Lab, F-69622 Villeurbanne, France

[4] Fac Sci Tunis, Unite Photon Polymeres & Dispositifs Optoelect, Tunis 2092, Tunisia

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 07期

关键词：

D O I：

10.1088/0268-1242/18/7/319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SnO2:Sb sol-gel derived thin films doped with Tb3+ were deposited on porous silicon (PS) layers. Transmission electron microscopy observations, electron diffraction patterns and energy dispersive x-ray analysis revealed the crystallization of small crystallites of cassiterite embedded in the porous layer and the presence of Tb3+ ions in the SnO2 crystallites. The photoluminescence spectrum shows that Tb3+ ions emit highly after annealing at 500 degreesC. Preliminary characterizations of the electrical and transient electroluminescence of the resulting nanocomposite structures are presented. We discuss the I-V of SnO2:Tb3+/PS device under both forward and reverse bias conditions.

引用

页码：703 / 707

页数：5

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