Hot carrier induced device degradation in RF-nMOSFET's

被引：1
作者：
Park, JT
Lee, BJ
Kim, DW
Yu, CG
Yu, HK
机构：
[1] Univ Inchon, Dept Elect Engn, Inchon, South Korea
[2] ETRI, Semicond Div, Taejon 305350, South Korea
来源：
MICROELECTRONICS RELIABILITY | 1998年 / 38卷 / 6-8期
关键词：
D O I：
10.1016/S0026-2714(98)00111-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study presents the hot carrier induced device degradation in 0.8 mu m RF-nMOSFET's within the general framework of the degradation mechanism. It has been found that the device degradation model of a single-finger gate MOSFET could be applied for a multi-finger gate RF-nMOSFET. The reduction of the cut-off frequency and maximum frequency after stress can be explained by the decrease of transconductance and the increase of drain output conductance. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1081 / 1084
页数：4
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