Fermi-level band filling and band-gap renormalization in Ga-doped ZnO

被引：125

作者：

Ye, JD ^{[1
]}

Gu, SL ^{[1
]}

Zhu, SM ^{[1
]}

Liu, SM ^{[1
]}

Zheng, YD ^{[1
]}

Zhang, R ^{[1
]}

Shi, Y ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 19期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1928322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fundamental optical properties of Ga-doped ZnO films grown by metalorganic chemical vapor deposition were investigated by room-temperature transmittance and photoluminescence (PL) spectroscopy. The Burstein-Moss (BM) shift of the absorption edge energy is observed at the carrier concentration up to 2.47 x 10(19) cm(-3). The absorption edges are fitted to a comprehensive model based on the electronic energy-band structure near critical points plus relevant discrete and continuum excitonic effects, taking account of the Fermi-level filling factor. The theoretical calculation for BM effect is in good agreement with the experimental facts, considering the nonparabolic nature of conduction-band and band-gap renormalization (BGR) effects. Meanwhile, the monotonic redshift of the near-band-gap emission detected by PL measurements has also been observed with increasing free-carrier concentration, which is attributed to the BGR effects, and can be fitted by an n(1/3) power law with a BGR coefficient of 1.3 x 10(-5) meV cm. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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