Probing the chemistry of perovskite systems by XPS and GD-OES depth-profiling: Potentials and limitations

被引:2
作者
Dally, Pia [1 ,2 ]
Messou, Davina [1 ,2 ]
Robillard, Muriel [1 ,2 ]
Cacovich, Stefania [1 ,3 ]
Yaiche, Armelle [4 ]
Rousset, Jean [4 ]
Etcheberry, Arnaud [2 ]
Bouttemy, Muriel [2 ]
机构
[1] IPVF, 18 Blvd Thomas Gobert, F-91120 Palaiseau, France
[2] Univ Versailles St Quentin Yvelines, Inst Lavoisier Versailles ILV, Univ Paris Saclay, CNRS,UMR 8180, 45 Ave Etats Unis, F-78035 Versailles, France
[3] CNRS, 18 Blvd Thomas Gobert, F-91120 Palaiseau, France
[4] EDF R&D, 18 Blvd Thomas Gobert, F-91120 Palaiseau, France
来源
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年
关键词
Triple cation halide perovskite; sputtering; XPS; GD-OES; SOLAR-CELLS;
D O I
10.1109/PVSC43889.2021.9518696
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The capabilities of XPS and GD-OES profiling have been evaluated on a half-cell constituted of glass / FTO / c-TiO2 / m-TiO2 / triple cation halide perovskites (Cs-0.05(MA(0.14), FA(0.86))(0.95) Pb (I-0.84, Br-0.16)(3)), focusing on metrological aspects. The validity of the chemical information measured by those destructive techniques is accurately studied, considering the possible modification inherent to the techniques themselves: X-Ray illumination, UHV, bombardment by Ar ions (mono or polyatomic). XPS and GD-OES have shown similar trends for the composition profiles. But the conditions employed for XPS profiling lead to a systematic reduction of lead, which could not be avoided as well as the organic part degradation and iodine loss. Nevertheless, differences of XPS depth profiles obtained using either Ar+ or Ar-n(+) have raised the question of the bombardment effect on the perovskite surface, influencing the reliability of the collected chemical information. The chemical and morphological study of the XPS and GD-OES crater is presented. The possibility to combine those two techniques for an advanced chemical characterization of perovskite stacks is discussed.
引用
收藏
页码:931 / 934
页数:4
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