The molar volume of silicon: Discrepancies and limitations

被引：0

作者：

Deslattes, RD ^{[1
]}

Kessler, EG ^{[1
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

来源：

1998 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS DIGEST | 1998年

关键词：

D O I：

10.1109/CPEM.1998.700004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new representation of the current molar volume discrepancy is offered which attends to a previous incorrect account of early NBS work First non-null test results are presented from comparisons of discrepant samples. A discussion of intrinsic limitations of melt grown crystals is included.

引用

页码：460 / 461

页数：2