Transmission electron microscopy investigation of the microstructure and chemistry of Si/Cu/In/Cu/Si interconnections

被引：26
作者：
Sommadossi, S
Litynska, L
Zieba, P
Gust, W
Mittemeijer, EJ
机构：
[1] Polish Acad Sci, Inst Met & Mat Sci, PL-30059 Krakow, Poland
[2] Univ Stuttgart, Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[3] Univ Stuttgart, Inst Phys Met, D-70569 Stuttgart, Germany
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 81卷 / 2-3期
关键词：
diffusion soldering; isothermal solidification; Cu-In system; intermetallics;
D O I：
10.1016/S0254-0584(03)00076-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/Si interconnections, obtained using a Cu metallization and an In interlayer and joined by diffusion soldering are presented. The Si/Cu/In/Cu/Si bonds were accomplished due to isothermal solidification and subsequent interdiffusion of In and Cu in the samples held at 180 degreesC. Application of a transmission electron microscope (TEM) with an attachment for high-resolution chemical analysis allowed characterizing the microstructural and microchemical feature of the intermetallics formed in the joint. Appearance of two phases, namely eta(Cu2In) and delta(Cu7In3), was confirmed by electron diffraction patterns and energy-dispersive X-ray (EDX) analysis. The bond quality and the high melting point of the phases (approximate to630 degreesC) indicate a great potential of this technique for joining of integrated circuits in electronics. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：566 / 568
页数：3
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