UV-enhanced atomic layer deposition of ZrO2 thin films at room temperature

被引：27

作者：

Lee, Byoung H. ^{[1
]}

Cho, Sangho ^{[1
]}

Hwang, Jae K. ^{[1
]}

Kim, Su H. ^{[1
]}

Sung, Myung M. ^{[1
]}

机构：

[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 22期

关键词：

Atomic layer deposition; ZrO2; Self-limiting reaction; UV-ALD; PET; THERMAL BARRIER COATINGS; GROWTH-KINETICS; TITANIUM-OXIDE; GAS-TRANSPORT; SILICON; SIO2; PHOTOIRRADIATION; PRECURSORS; EPITAXY; TIO2;

D O I：

10.1016/j.tsf.2010.03.059

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A UV-enhanced atomic layer deposition (UV-ALD) process was developed to deposit ZrO2 thin films on poly (ethylene terephthalate) (PET) polymer substrates using zirconium tetra-tert-butoxide (ZTB) and H2O as precursors with UV light. In the UV-ALD process, the surface reactions were found to be self-limiting and complementary enough to yield uniform, conformal, and pure ZrO2 thin films on polymer substrates at room temperature. The UV light was very effective to obtain the high-quality ZrO2 thin films with good adhesive strength on polymer substrates. The ZrO2 thin films exhibit large-scale uniformity, sharp interfaces, and unique electrical properties. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：6432 / 6436

页数：5

共 26 条

[1] Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process [J].