共 26 条
[3]
Si3N4/Al2O3 Stack Layer Passivation for InAlAs/InGaAs InP-Based HEMTs With Good DC and RF Performances
[J].
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY,
2018, 6 (01)
:49-54
[5]
Hamada H, 2020, IEEE MTT S INT MICR, P1121, DOI [10.1109/IMS30576.2020.9223851, 10.1109/ims30576.2020.9223851]
[6]
300-GHz 120-Gb/s Wireless Transceiver with High-Output-Power and High-Gain Power Amplifier Based on 80-nm InP-HEMT Technology
[J].
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019),
2019,
[7]
Huang J. C., 1991, 1991 IEEE MTT-S International Microwave Symposium Digest (91CH2870-4), P713, DOI 10.1109/MWSYM.1991.147103
[8]
Hur KY, 1995, GAAS IC SYMPOSIUM TECHNICAL DIGEST 1995 - 17TH ANNUAL, P101, DOI 10.1109/GAAS.1995.528971