Enhancement of f MAX of InP-based HEMTs by double-recessed offset gate process

被引：2

作者：

Wang, Bo ^{[1
,2
]}

Ding, Peng ^{[2
]}

Feng, Rui-Ze ^{[2
]}

Cao, Shu-Rui ^{[2
]}

Wei, Hao-Miao ^{[2
]}

Liu, Tong ^{[2
]}

Liu, Xiao-Yu ^{[2
]}

Li, Hai-Ou ^{[1
]}

Jin, Zhi ^{[2
]}

机构：

[1] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin 541004, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing 100029, Peoples R China

来源：

CHINESE PHYSICS B | 2022年 / 31卷 / 05期

基金：

中国国家自然科学基金;

关键词：

InP; HEMT; maximum oscillation frequency (f (MAX)); double-recess; offset gate;

D O I：

10.1088/1674-1056/ac6013

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (I (D,max)) and maximum extrinsic transconductance (g (m,max)) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (f (MAX)) by reducing drain output conductance (g (ds)) and drain to gate capacitance (C (gd)). In addition, further improvement of f (MAX) was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of C (gd) to source to gate capacitance (C (gs)) by extending drain-side recess length (L (rd)). Compared with the single-recessed HEMTs, the f (MAX) of double-recessed offset gate HEMTs was increased by about 20%.

引用

页数：6

共 26 条

[1] High-performance InP-Based enhancement-mode HEMT's using non-alloyed ohmic contacts and Pt-based buried-gate technologies [J].