Enhancement of f MAX of InP-based HEMTs by double-recessed offset gate process

被引:2
作者
Wang, Bo [1 ,2 ]
Ding, Peng [2 ]
Feng, Rui-Ze [2 ]
Cao, Shu-Rui [2 ]
Wei, Hao-Miao [2 ]
Liu, Tong [2 ]
Liu, Xiao-Yu [2 ]
Li, Hai-Ou [1 ]
Jin, Zhi [2 ]
机构
[1] Guilin Univ Elect Technol, Guangxi Key Lab Precis Nav Technol & Applicat, Guilin 541004, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, High Frequency High Voltage Device & Integrated C, Beijing 100029, Peoples R China
基金
中国国家自然科学基金;
关键词
InP; HEMT; maximum oscillation frequency (f (MAX)); double-recess; offset gate;
D O I
10.1088/1674-1056/ac6013
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A double-recessed offset gate process technology for InP-based high electron mobility transistors (HEMTs) has been developed in this paper. Single-recessed and double-recessed HEMTs with different gate offsets have been fabricated and characterized. Compared with single-recessed devices, the maximum drain-source current (I (D,max)) and maximum extrinsic transconductance (g (m,max)) of double-recessed devices decreased due to the increase in series resistances. However, in terms of RF performance, double-recessed HEMTs achieved higher maximum oscillation frequency (f (MAX)) by reducing drain output conductance (g (ds)) and drain to gate capacitance (C (gd)). In addition, further improvement of f (MAX) was observed by adjusting the gate offset of double-recessed devices. This can be explained by suppressing the ratio of C (gd) to source to gate capacitance (C (gs)) by extending drain-side recess length (L (rd)). Compared with the single-recessed HEMTs, the f (MAX) of double-recessed offset gate HEMTs was increased by about 20%.
引用
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页数:6
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