Total Ionizing Dose Effects on Silicon Ring Resonators

被引：30

作者：

Bhandaru, S. ^{[1
]}

Hu, S. ^{[2
]}

Fleetwood, D. M. ^{[3
]}

Weiss, S. M. ^{[3
]}

机构：

[1] Vanderbilt Univ, Interdisciplinary Grad Program Mat Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

[3] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 01期

关键词：

High energy radiation; ring resonator; silicon; surface passivation; GAMMA-RADIATION; FIBERS; DAMAGE; RAY;

D O I：

10.1109/TNS.2014.2387772

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of silicon ring resonators exposed to 10-keV X-ray and 662-keV gamma radiation is reported. Unpassivated rings having no native oxide exhibit a blue-shift in resonance wavelength with increasing total dose, which is attributed to surface oxidation that is accelerated in the presence of high energy radiation. Unpassivated rings exposed to 145 krad of (SiO2) of 10-keV X-rays or gamma rays exhibit blue-shifts significantly larger than the full-width at half-maximum of the resonance, leading to a more than 10 dB change in transmission. No changes in the transmission of passivated rings were observed upon irradiation. Therefore, passivated rings can function as radiation-tolerant elements in optoelectronic circuitry.

引用

页码：323 / 328

页数：6

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