Irradiation induced modification in transport properties of LaNiO3 thin films: An x-ray absorption study

被引：19

作者：

Kumar, Yogesh ^{[1
]}

Singh, Abhinav Pratap ^{[2
]}

Sharma, S. K. ^{[3
]}

Choudhary, R. J. ^{[4
]}

Thakur, P. ^{[5
]}

Knobel, M. ^{[3
]}

Brookes, N. B. ^{[5
]}

Kumar, Ravi ^{[1
,6
]}

机构：

[1] Inter Univ Accelerator Ctr, Div Mat Sci, New Delhi 110067, India

[2] Natl Inst Technol, Jalandhar 144011, India

[3] Univ Estadual Campinas UNICAMP Campinas, Inst Fis Gleb Wataghin, BR-13083859 Sao Paulo, Brazil

[4] UGC DAE Consortium Sci Res, Indore 452001, Madhya Pradesh, India

[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[6] Natl Inst Technol, Ctr Mat Sci & Engn, Hamirpur 177005, India

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 11期

关键词：

METAL-INSULATOR-TRANSITION; ELECTRONIC-PROPERTIES; PEROVSKITES; SPECTROSCOPY; GAP; PR; ND;

D O I：

10.1063/1.4752005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly c-axis oriented LaNiO3 thin films are grown on LaAlO3 (001) single crystal substrates using rf-magnetron sputtering. Swift heavy ion irradiation induced variations in structural and electrical transport properties of deposited films are studied. Pristine film shows unusual insulating character while the irradiated film exhibits metallic behaviour. X-ray diffraction study indicates that irradiation improves the crystalline character of films while retaining the oriented single phase growth. Electronic structure measurements performed using x-ray absorption spectroscopy at O K, La M-5.4, and Ni L-3,L-2-edges reveal that Ni-O hybridization-controlled localization of charge carriers is responsible for the observed transport behaviour. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752005]

引用

页数：4

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