Strongly coupled van der Waals heterostructures for high-performance infrared phototransistor

被引:41
作者
Li, Ningning [1 ,2 ,3 ]
Wen, Yao [2 ,4 ]
Cheng, Ruiqing [1 ,2 ]
Yin, Lei [1 ,2 ]
Wang, Feng [1 ,2 ]
Li, Jie [1 ,2 ]
Shifa, Tofik Ahmed [1 ,2 ]
Feng, Liping [5 ]
Wang, Zhenxing [1 ]
He, Jun [1 ]
机构
[1] Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Sino Danish Ctr Educ & Res, Beijing 100190, Peoples R China
[4] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechno, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
[5] Northwestern Polytech Univ, Coll Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
CHARGE-TRANSFER; GRAPHENE; PHOTODETECTORS; TELLURIUM; MOS2; TRANSPORT; STRAIN; LAYERS;
D O I
10.1063/1.5083685
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interfacial coupling in van der Waals (vdWs) heterostructures can effectively modulate the device performance. In this study, we demonstrate a high performance infrared detector fabricated by direct epitaxial growth of Te nanowires onto a MoS2 monolayer. Such directly grown Te/MoS2 heterostructures show much stronger interfacial coupling than artificially transferred Te/MoS2 hybrids, as evidenced from their Raman and photoluminescence spectra. The strong vdWs interfacial coupling leads to a high performance infrared detector with both ultrahigh photoresponsivity (> 10(3) A/W) and rapid response time (tau(rising) = 15 ms) at the telecommunication wavelength of 1550 nm. The anti-bipolar and rectification behaviors observed in the strongly coupled grown Te-MoS2 heterojunction further confirm the effective interfacial coupling. In contrast, the weakly coupled transferred Te-MoS2 heterojunction that is obtained by artificial transfer exhibits negligible anti-bipolar behavior and slight rectification behavior. These findings indicate that the coupled vdWs hybrid structures have great potential for achieving high performance photodetectors. Published under license by AIP Publishing.
引用
收藏
页数:5
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