THz Quantum Hall Conductivity Studies in a GaAs Heterojunction

被引：2

作者：

Stier, A. V. ^{[1
]}

Zhang, H. ^{[1
]}

Ellis, C. T. ^{[1
]}

Eason, D. ^{[1
]}

Strasser, G. ^{[1
]}

McCombe, B. D. ^{[1
]}

Cerne, J. ^{[1
]}

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

quantum Hall effect; Faraday Effect; terahertz; magneto-optics;

D O I：

10.1063/1.3666534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on Faraday rotation measurements in the THz regime of a two dimensional electron gas in the magnetic field region of cyclotron resonance. Clear steps at several filling factors in the Faraday rotation as a function of carrier density are interpreted as THz ac quantum Hall plateaus. Unlike the dc case, the steps are not quantized but they do depend on filling factor.

引用

页数：2

共 9 条

[1] EFFECT OF LOCALIZATION ON THE HALL CONDUCTIVITY IN THE TWO-DIMENSIONAL SYSTEM IN STRONG MAGNETIC-FIELDS [J].